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Description
2N2907A . SMALL SIGNAL PNP TRANSISTORS. DESCRIPTION. The 2N2905A and 2N2907A are silicon Planar. Epitaxial PNP transistors in Jedec TO-39 (for. 2N2907 2N2907A . PNP SILICON TRANSISTOR. DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2906, 2N2907 series types are silicon PNP epitaxial Dec 2, 2015 Displacement damage. Optional. Agency part number (ex). 5202/001/04R (1). 1. Example of the 2N2907A in LCC-3 Gold finish. ST part number Thermal Resistance, Junction to Ambient. R JA. 200. C/W. Thermal Resistance, Junction to Case. R JC. 83.3. C/W. Stresses exceeding Maximum Ratings CP591X- 2N2907A . PNP - General Purpose Transistor Die. 0.6 Amp, 60 Volt. Die Size. 19.3 x 19.3 MILS. Die Thickness. 5.9 MILS. Base Bonding Pad Size.
| Part Number | 2N2907A |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - Bipolar (BJT) - Single |
| Brand | National Semiconductor |
| Description | TRANS PNP 60V 0.6A TO-18 |
| Series | - |
| Packaging | Bulk |
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 600mA |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 10nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Power - Max | 400mW |
| Frequency - Transition | 200MHz |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-206AA, TO-18-3 Metal Can |
| Supplier Device Package | TO-18 |
| Image |  |
2N2907A
NS
1000
1.19
Kang Da Electronics Co.
2N2907A
NS/
3000
2.62
Belt (HK) Electronics Co
2N2907A
NATIONAL
11000
4.05
FLOWER GROUP(HK)CO.,LTD
2N2907A
National Semiconductor??TI ??
1000
5.48
E-star Trading Enterprise Limited
2N2907A
National Semiconductor¡]TI ¡^
6000
6.91
HK Niuhuasi Technology Limited
