Part Number | FDG312P |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | National Semiconductor |
Description | MOSFET P-CH 20V 1.2A SC70-6 |
Series | PowerTrench |
Packaging | Tape & Reel (TR) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 1.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
Vgs(th) (Max) @ Id | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 5nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 330pF @ 10V |
Vgs (Max) | ±8V |
FET Feature | - |
Power Dissipation (Max) | 750mW (Ta) |
Rds On (Max) @ Id, Vgs | 180 mOhm @ 1.2A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SC-70-6 |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Image |
Hot Offer
FDG312P
National Semiconductor??TI ??
2645
2.8375
E-Future Co., Limited
FDG312P
National Semiconductor¡]TI ¡^
2708
3.42
Hong Kong Shunyida Technology Limited
FDG312P
NS
8627
1.09
Yingxinyuan INT'L (Group) Limited
FDG312P
NS/
1624
1.6725
FLOWER GROUP(HK)CO.,LTD
FDG312P
NATIONAL
2130
2.255
CIS Ltd (CHECK IC SOLUTION LIMITED)