Part Number | IRFS4010-7PPBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | National Semiconductor |
Description | MOSFET N-CH 100V 190A D2PAK-7 |
Series | HEXFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 190A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 230nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 9830pF @ 50V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 380W (Tc) |
Rds On (Max) @ Id, Vgs | 4 mOhm @ 110A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D2PAK |
Package / Case | TO-263-7, D²ÂPak (6 Leads + Tab), TO-263CB |
Image |
IRFS4010-7PPBF
NS
2632
0.21
HK HEQING ELECTRONICS LIMITED
IRFS4010-7PPBF
NS/
112
1.2075
Ysx Tech Co., Limited
IRFS4010-7PPBF
NATIONAL
1418
2.205
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
IRFS4010-7PPBF
National Semiconductor??TI ??
8218
3.2025
Yingxinyuan INT'L (Group) Limited
IRFS4010-7PPBF
National Semiconductor¡]TI ¡^
9504
4.2
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED