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Description
www.fairchildsemi.com. BS170 / MMBF170 Rev. E2. 1. March 2010. BS170 / MMBF170 . N-Channel Enhancement Mode Field Effect Transistor. General Jul 14, 2015 MMBF170 . SOT23-3 (Discrete-. G). Jul 14, 2015. 1.0. FSCP. 0.008706 g. Each. Manufacturing Process Information. Terminal Finish. Base Alloy. Feb 27, 2009 MMBF170 -13. MMBF170 -7. MMBF170 -7-F. 2N7002K-7. DMN601DMK-7. DMN601DWK-7. DMN601K-7. DMN601TK-7. DMN601VK-7. Jun 28, 2007 MMBF170 -7-F. 202. MMDT2222A-13. 17. ASMCC0096-7. 79. BAW56-13-01-F. 141. MMBT2222A-13. 203. MMDT2222A-7. 18. ASMCC0096-7-
| Part Number | MMBF170 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | National Semiconductor |
| Description | MOSFET N-CH 60V 500MA SOT-23 |
| Series | - |
| Packaging | Tape & Reel (TR) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 500mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Input Capacitance (Ciss) (Max) @ Vds | 40pF @ 10V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 300mW (Ta) |
| Rds On (Max) @ Id, Vgs | 5 Ohm @ 200mA, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23 |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Image |  |
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