Part Number | NDC632P |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | National Semiconductor |
Description | MOSFET P-CH 20V 2.7A SSOT-6 |
Series | - |
Packaging | |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 2.7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 15nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 550pF @ 10V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1.6W (Ta) |
Rds On (Max) @ Id, Vgs | 140 mOhm @ 2.7A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SuperSOT,6 |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |
Image |
NDC632P
NS
41734
0.4
HK HEQING ELECTRONICS LIMITED
NDC632P
NS/
3000
1.1025
Hong Kong Capital Industrial Co.,Ltd
NDC632P
NATIONAL
55100
1.805
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
NDC632P
National Semiconductor??TI ??
32000
2.5075
KST Components Limited
NDC632P
National Semiconductor¡]TI ¡^
368000
3.21
Shenzhen WTX Capacitor Co., Ltd.