Part Number | NDS8961 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | National Semiconductor |
Description | MOSFET 2N-CH 30V 3.1A 8-SOIC |
Series | - |
Packaging | Tape & Reel (TR) |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 3.1A |
Rds On (Max) @ Id, Vgs | 100 mOhm @ 3.1A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 10nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 190pF @ 15V |
Power - Max | 900mW |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SO |
Image |
NDS8961
NS
6221
0.49
Finestock Electronics HK Limited
NDS8961
NS/
5745
1.7675
H.T. Electronics Industrial Co., Limited
NDS8961
NATIONAL
4632
3.045
HK HEQING ELECTRONICS LIMITED
NDS8961
National Semiconductor??TI ??
7548
4.3225
Cicotex Electronics (HK) Limited
NDS8961
National Semiconductor¡]TI ¡^
4396
5.6
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED